Matrix 111 Asher / Etcher, 4" to 6"
Plasma Power:
- RF 100-500 W Auto-tune
- 600 Watts maximum
- 13.56 MHz
Wafers:
- Round Silicon and GaAs
- 4.5" Square Substrate
Cassette Platform:
- Adjustable
Closed Loop Pressure Control:
- Tylan Butterfly Valve
- Capacitance Manometer
Latest Software Version /Overhead Time:
- 4.07CX18 / 32-36 sec (includes pre-heat option)
Temperature Control of Wafer Chuck:
- Closed Loop
- Resistive
- Element Heated
- Anti-Skate
- Center-Draw Chuck
- 150°C - 300°C (+5°C)
- Descum: 100°C - 150°C (+5°C) @ <250W )
Plasma Chamber / Electrode Design:
- Side Shooter Gas Inlet / Full Meshed Electrodes
Baffle Design:
- Single Silicon
Wafer Cooling System
No Baseplate Cooling
Process:
- Throughput: >55 WPH
- Process Gases: 02 & N2 Standard (3rd MFC optional)
- Strip Rate (6" wafers, 1.2 μ 120°C baked resist)
- >2.5 μ/min @ 250°C > 3.5 μ/min @ 300°C
Repeatability + 10%
- Non-uniformity, 1 sigma: <5%
- Particulates added/ size; <0.10 / cm2 > 0.2mm
- Descum (+10% 1sigma)
- Min Vacuum Pump speed: 169 CFM
Reliability:
- Availability: > 95%
- MTBF: >450 hours
- MTBA: >24 hours
- MTTR: <4 hours