EVG 850 LT Bonder, 8"
- Basic Unit
- Handling Unit
- High Performance SOI Quality Capabilities
- Facility connections Through Machine Bottom Side
- Modular Machine Platform
- Buffer / Cooling Station for 100 - 200 mm Wafers
- User Interface
- Software: EVG CIMFramework (without license)
- Fully Automated Ergo Load Cassette Station, Non-tiliting (4)
- Material Mapping Unit (MMU) (4)
- Additional Standard Pre-Aligner
- SECS / GEM - Hardware / Software Interface (F008)
- EDA - Equipment Data Acquisition (Interface A) (F0009)
- Wafer ID Reader
- Filter Fan Unit ISO 3 for Process and Handling Area
- Filter Fan Unit ISO 3 for Process and Handling Area for 5th Module
- Activated Carbon Filters
- Ionizer Bar for Handling Area T-Frame
- Charge Plate Monitor
- Charge Plate
- IR-Inspection Station for up to 200 mm wafers
- IR Set for 200 mm Wafers with Notch
- Rejected Wafer Sorting Software
- Prebond Module -Closed Type
- Prebond Chuck for 200 mm Wafers
- Vacuum system for Bond Module
- Turbo molecular pump for Bond Module
- Clean Module (200 mm)
- DI-Water Dispense Line for Fully Automated Systems
- Bypass DI-Water System
- Spinner Chuck for 100 mm – 200 mm Wafers
- Jet Nozzle
- Center DI-Water Dispense Line
- Chemistry Line 1/4„
- Digital Flow Meter for 1/4" Tubing
- Nitrogen Drying Nozzle on Dispense Arm
- Cleaning capability with chemistry consisting of Chemistry Line 1/4„
- Digital Flow Meter for 1/4" Tubing
- Ionizer Bar for one Process Module
- LowTempPlasma Activation Module
- LowTemp Plasma Activated Bonding License (ex-situ)
- Process Gas Manifold for Four (4) Gas Lines
- Mass Flow Controller 50 sccm
- Mass Flow Controller 2000 sccm
- Vacuum System
- High Frequency RF Generator with Matching Unit
- Low Frequency RF Generator with Matching Unit
- Turbo Molecular Pump
- Chamber Coating for Metal Ion Free Activation
- Ex Situ Plasma Activation Chuck for up to 200 mm Wafers
- Focus Ring for 200 mm Wafers
- Offline Recipe Editor
- Offline Recorder
- Toolbox Basic prepared
Wafer Setup:
- Silicon
- Round, Notched
- Thickness: 300 μm - 800 μm
Function:
- For mechanically aligned SOI and direct wafer bonding with LowTemp plasma activation
- All essential steps for fusion bonding – from cleaning, plasma activation to pre-bonding and IR-inspection – are combined